With the rapid development of optoelectronics technology, 810 nm high power LED has become a hot topic in the industry. As the longest wavelength in the visible light spectrum, 810 nm high power LED has unique advantages and broad application prospects. This article will introduce the basic concepts, development process, and application fields of 810 nm high power LED, hoping to provide a comprehensive understanding of this emerging technology.

Introduction to 810 nm High Power LED

810 nm high power LED refers to a light-emitting diode with a peak emission wavelength of 810 nm. It belongs to the near-infrared spectrum, which is close to the peak absorption wavelength of human skin. Due to its unique characteristics, 810 nm high power LED has been widely used in medical, military, and industrial fields.

Development Process of 810 nm High Power LED

The development of 810 nm high power LED can be traced back to the early 2000s. At that time, with the continuous optimization of semiconductor materials and manufacturing technology, the output power and luminous efficiency of LED have been significantly improved. In 2007, the first 810 nm high power LED was successfully developed by a domestic company. Since then, the development of 810 nm high power LED has entered a fast track.

In the early stage of development, 810 nm high power LED mainly faced two challenges: material selection and thermal management. The material selection needs to ensure the stability and reliability of the device, while the thermal management needs to ensure the normal operation of the device under high power. With the continuous improvement of technology, these challenges have been gradually overcome. Today, 810 nm high power LED has reached a mature level in terms of performance and stability.

Material Selection of 810 nm High Power LED

The core material of 810 nm high power LED is gallium indium arsenide (GaInAs). The selection of GaInAs material needs to consider factors such as bandgap, electron mobility, and thermal conductivity. In order to achieve high output power and high luminous efficiency, the bandgap of GaInAs needs to be close to 810 nm. At the same time, the electron mobility and thermal conductivity of GaInAs should be as high as possible to ensure the normal operation of the device under high power.

Thermal Management of 810 nm High Power LED

As the output power of 810 nm high power LED increases, the heat generated by the device also increases. In order to ensure the normal operation of the device, it is necessary to design a reasonable thermal management system. The commonly used thermal management methods include heat conduction, heat convection, and heat radiation. Among them, heat conduction is the most effective way to dissipate heat, and it is also the most widely used method in the industry.

Application Fields of 810 nm High Power LED

810 nm high power LED has unique advantages in the near-infrared spectrum, which makes it have a wide range of application fields. The main application fields include:

• Medical field: 810 nm high power LED can be used for photodynamic therapy, wound healing, and other applications.

• Military field: 810 nm high power LED can be used for target detection, night vision, and other applications.

• Industrial field: 810 nm high power LED can be used for non-destructive testing, 3D printing, and other applications.

Conclusion

810 nm high power LED is an emerging technology with great development prospects. With the continuous improvement of technology and the expansion of application fields, 810 nm high power LED will play a more significant role in the future. This article has introduced the basic concepts, development process, and application fields of 810 nm high power LED, hoping to provide a reference for the development and application of this technology.