High power NIR LED, or high power near-infrared light-emitting diode, has become a crucial component in various industries due to its unique properties and wide range of applications. This article aims to provide an in-depth introduction to the high power NIR LED industry, covering its development history, key technologies, market trends, and future prospects.

Development History of High Power NIR LED

The concept of LED was first proposed by Oleg Vladimirovich Losev in 1927, and the first practical LED was developed by Nick Holonyak Jr. in 1962. Since then, LED technology has undergone continuous innovation and development. The 1990s marked the birth of high power NIR LED technology, which has since become an important part of the LED industry.

High power NIR LED technology has evolved through several stages. Initially, the focus was on improving the efficiency and stability of the LED. In the 2000s, researchers began to explore the application of high power NIR LED in various fields, such as medical, optical communication, and security. In recent years, with the continuous advancement of semiconductor technology, the performance of high power NIR LED has been significantly improved, and its application range has been further expanded.

Key Technologies of High Power NIR LED

High power NIR LED technology involves several key technologies, including epitaxial growth, material selection, structure design, and packaging technology.

Epitaxial Growth: Epitaxial growth is a key technology for the production of high power NIR LED. It involves the growth of high-quality semiconductor layers on a substrate, which can effectively improve the performance of the LED. Common epitaxial growth methods include molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD).

Material Selection: The material selection for high power NIR LED is critical to its performance. Commonly used materials include gallium nitride (GaN), aluminum gallium nitride (AlGaN), and indium gallium nitride (InGaN). These materials have excellent optical and electrical properties, which can effectively improve the efficiency and stability of the LED.

Structure Design: The structure design of high power NIR LED is also crucial to its performance. Common structures include single-layer structure, multi-layer structure, and quantum well structure. These structures can effectively improve the optical confinement and carrier injection efficiency of the LED.

Packaging Technology: Packaging technology is essential for ensuring the long-term stability and reliability of high power NIR LED. Common packaging methods include flip-chip packaging, wire bonding packaging, and chip-on-board (COB) packaging.

Market Trends of High Power NIR LED

The market for high power NIR LED has been growing rapidly in recent years, driven by the continuous expansion of its application fields. The following are some of the key market trends:

Medical Field: High power NIR LED has excellent tissue穿透性, making it suitable for various medical applications, such as endoscopy, laser surgery, and optical coherence tomography (OCT). The demand for high power NIR LED in the medical field is expected to continue to grow in the future.

Optical Communication Field: High power NIR LED is widely used in optical communication systems, such as fiber optic communication and free-space optical communication. With the continuous development of 5G and future 6G communication technology, the demand for high power NIR LED in the optical communication field will continue to increase.

Security Field: High power NIR LED is used in security fields such as biometric recognition and night vision devices. The demand for high power NIR LED in the security field is expected to grow as the need for advanced security technology increases.

Future Prospects of High Power NIR LED

The future development of high power NIR LED technology is promising. The following aspects are worth paying attention to:

Material Innovation: The continuous innovation of semiconductor materials will further improve the performance of high power NIR LED. For example, the development of nitride-based materials with high light-emitting efficiency and long service life will bring new opportunities for the application of high power NIR LED.

Structure Optimization: The optimization of LED structure design will further improve the performance of high power NIR LED. For example, the development of micro-structured light-emitting diodes (μ-LED) can effectively improve the light extraction efficiency of the LED.

Application Expansion: The application of high power NIR LED will continue to expand into new fields, such as 3D sensing, augmented reality (AR), and virtual reality (VR). This will further promote the development of the high power NIR LED industry.

In conclusion, high power NIR LED technology has made significant progress in recent years and has become an important part of the LED industry. With the continuous innovation of technology and the expansion of application fields, high power NIR LED is expected to play a more significant role in the future.