With the rapid development of optoelectronics technology, 850nm high-power LED has become a hot topic in the industry. As the longest wavelength in the visible light spectrum, 850nm high-power LED has many advantages such as high efficiency, low power consumption, and good thermal dissipation. This article will introduce the industry background, technical characteristics, and application prospects of 850nm high-power LED.

Industry Background

The optoelectronics industry has been developing rapidly in recent years, with the demand for high-power LED continuously increasing. High-power LED has the advantages of high brightness, wide viewing angle, and long life, which is widely used in various fields such as automotive lighting, outdoor lighting, and display. Among them, 850nm high-power LED has a unique advantage in the infrared sensing field, which has become a new hotspot in the industry.

Technical Characteristics

1. High brightness: The brightness of 850nm high-power LED can reach up to 10,000 mcd, which is several times higher than that of general infrared LED. This is mainly due to the excellent photoelectric conversion efficiency of the LED chip and the optimized optical design.

2. Low power consumption: The forward voltage of 850nm high-power LED is about 1.8V, and the typical working current is 350mA. Compared with the traditional infrared LED, the power consumption is significantly reduced, which is conducive to energy saving and environmental protection.

3. Good thermal dissipation: The thermal conductivity of the 850nm high-power LED is relatively high, and the heat generated during the working process can be quickly dissipated, ensuring the stable performance of the product.

4. Wide application range: The 850nm high-power LED can be used in various fields such as infrared sensing, automotive lighting, outdoor lighting, and display, with broad market prospects.

Production Process

The production process of 850nm high-power LED mainly includes the following steps:

1. Material preparation: High-purity gallium nitride (GaN) and indium phosphide (InP) are used as the main materials for the LED chip.

2. Epitaxy: The epitaxial process is used to grow the LED chip on the substrate. The epitaxial process mainly includes molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD).

3. Fabrication: The LED chip is processed through photolithography, etching, and metalization to form the final structure.

4. Packaging: The packaged LED is encapsulated with epoxy resin to protect the internal structure and improve the service life.

Application Prospects

1. Infrared sensing: The 850nm high-power LED has excellent performance in the infrared sensing field, which can be used for distance measurement, human body detection, and other applications.

2. Automotive lighting: The 850nm high-power LED can be used for automotive rear fog lights, brake lights, and other lighting applications, with high brightness and energy-saving advantages.

3. Outdoor lighting: The 850nm high-power LED can be used for outdoor street lights, garden lights, and other lighting applications, with high brightness and long life.

4. Display: The 850nm high-power LED can be used for display applications such as medical equipment, security monitoring, and other fields, with excellent performance and stability.

Conclusion

With the continuous development of optoelectronics technology, 850nm high-power LED has a broad market prospect. In the future, with the optimization of technology and the expansion of application fields, the market demand for 850nm high-power LED will continue to rise. At the same time, the industry should also focus on the development of high-efficiency, energy-saving, and environmentally friendly products, so as to meet the market demand for sustainable development.